Monday, May 22

Continuum Models of Epitaxial Growth

1:30 PM-2:15 PM
Room: Liberty B&C
Chair: Robert V. Kohn, Courant Institute of Mathematical Sciences, New York University, USA

Continuum modelling of crystal growth began with Burton, Cabrera, and Frank. In 1951, these researchers matched a coarse-grained description of steady-state mass transport to a discrete description of step motion. An crucial step was taken by Mullins (1957), who introduced a continuum description of the surface profile itself. Generalizations of these methodologies continued slowly until, after about 10 years, a explosive renaissance began in response to the exquisite control gained in the laboratory with modern epitaxial growth techniques. In this talk, the speaker will review recent progress in continuum modelling with an emphasis on those aspects that exploit our improved appreciation of the potential energy surface encountered by diffusing species adsorbed on a single crystal surface. He will discuss the work of others on one-component materials and recent work on the growth of compound-forming materials.

Andrew Zangwill
School of Physics
Georgia Institute of Technology, USA
©2000, Society for Industrial and Applied Mathematics
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