2:15 PM-3:00 PM
Room: Liberty B&C
Chair: Robert V. Kohn, Courant Institute of Mathematical Sciences, New York University, USA
In epitaxial growth, a thin film grows as a single crystal that inherits the crystal properties of the underlying substrate. The focus of this talk will be on molecular beam epitaxy (MBE), which is the growth method used in the most demanding applications such as high-performance, low-power systems for wireless communications. Because of the wide range of relevant length scales, a hierarchy of models are required for effective description of epitaxial growth, including ab initio, kinetic Monte Carlo, continuum and bulk models. Connections between these models and fast, robust numerical methods for their simulation are also needed. The speaker will describe a new island dynamics model for epitaxial growth and a level set numerical method for its simulation. He will also discuss development of control algorithms based on these models and their application to MBE.
Russel E. Caflisch
Department of Mathematics
University of California, Los Angeles, USA