Tuesday, May 23

MS22
Epitaxial Growth - Part III of IV

3:30 PM-5:30 PM
Room: Liberty C

For description, see Part I, MS8; for Parts II and IV, see MS15 and MS29, respectively.

Organizers: Robert V. Kohn
Courant Institute of Mathematical Sciences, New York University, USA
George Gilmer
Bell Laboratories, Lucent Technologies, USA
3:30-3:55 Atomistic Simulations of Sputter Deposition Processes for Thin Films
George Gilmer, Organizer; J. Dalla Torre, F. H. Baumann, and P. O'Sullivan, Bell Laboratories, Lucent Technologies, USA
4:00-4:25 Modeling Epitaxial Growth Using the Level-Set Method
Christian Ratsch, University of California, Los Angeles and HRL Laboratories, USA; M. F. Gyure, HRL Laboratories, USA; Russel Caflisch, S. Chen, M. Kang, B. Merriman, and S. Osher University of California, Los Angeles, USA; and D. D. Vvedensky, Imperial College, United Kingdom
4:30-4:55 Modeling of Microstructural and Surface Morphological Evolution
David L. Chopp, Northwestern University, USA; Joe E. Greene and Suneel Kodambaka, University of Illinois, Urbana-Champaign, USA
5:00-5:25 A Continuum Model for Epitaxial Growth
Tim Schulze, University of Tennessee, Knoxville, USA; and Weinan E, Princeton University and Courant Institute of Mathematical Sciences, New York University, USA

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