Monday, May 22

Epitaxial Growth - Part I of IV

3:30 PM-5:30 PM
Room: Liberty C

For Parts II, III, and IV, see MS15, MS22, and MS29, respectively.

Epitaxial growth is the process by which a crystalline film is formed. It can be modeled in different ways: Monte Carlo simulation tracks the positions of atoms; step flow laws track the positions of steps; surface evolution laws track the continuum-scale surface as the solution of a PDE. All three approaches are valuable; they describe different length scales. The tasks of computing these models efficiently, using them effectively, and linking them with one another are among the grand challenges of materials science.

Organizers: Robert V. Kohn
Courant Institute of Mathematical Sciences, New York University, USA
George Gilmer
Bell Laboratories, Lucent Technologies, USA
3:30-3:50 Coarsening of Step Bunches in Step Flow Growth
Cameron Connell, University of California, Los Angeles, USA
3:55-4:15 Continuum Limits of Epitaxial Thin Film Growth
Weinan E, Princeton University and Courant Institute of Mathematical Sciences, New York University, USA; Robert V. Kohn, Organizer; and Aaron N. K. Yip, Purdue University, West Lafayette, USA
4:20-4:40 Current-Induced Step Dynamics and Pattern Formation on Crystal Surfaces
John D. Weeks, University of Maryland, College Park, USA; and Da-Jiang Liu, Iowa State University, USA
4:45-5:05 Faceting During Thin Film Evolution
Daniel Kandel and Navot Israeli, Weizmann Institute of Science, Israel
5:10-5:30 Kinetic Monte Carlo and Rate Equation Studies of Thin Film Growth with Dynamic Growth Conditions
Martha A. Gallivan, Richard M. Murray, and David G. Goodwin, California Institute of Technology, USA

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